机译:氨分子束外延在100mm Si(111)上的AlGaN / AlN应力缓解层上生长的GaN中的拉伸应变起源
NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore;
Temasek Laboratories, Nanyang Technological University, 637553, Singapore;
NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore,Temasek Laboratories, Nanyang Technological University, 637553, Singapore;
NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore;
A1. Stresses; A1. Dislocations; A1. Diffusion; A3. Molecular beam epitaxy; B1. Nitrides;
机译:通过氨分子束外延在100-mm Si(111)上的AlGaN / AlN应力缓解层上生长的GaN的结构特性
机译:AlN / GaN应力缓解层的应变状态及其对100mm Si(111)上氨分子束外延生长的GaN缓冲层的影响
机译:AIN / GaN应力缓解层的应变状态及其对100mm Si(111)上氨分子束外延生长的GaN缓冲层的影响
机译:通过氨气源分子束外延在Si(111)上生长的高品质Aln和GaN。
机译:用于AlGaN / GaN和InAlN / GaN二极管以及在硅(111)衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
机译:Si在GaN / AlN / Si(111)等离子体辅助分子束外延中的作用:极性和反型
机译:使用氨分子束外延在4H-siC(0001)和si(111)衬底上以低生长速率生长的高质量alN(0001)层的原位NC-aFm测量
机译:分子束外延生长的alGaN / GaN高电子迁移率晶体管中陷阱的光电离光谱;杂志文章