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机译:通过氨分子束外延在100-mm Si(111)上的AlGaN / AlN应力缓解层上生长的GaN的结构特性
NOVFTAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore;
Temasek Laboratories, Nanyang Technological University, 637553, Singapore;
NOVFTAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore,Temasek Laboratories, Nanyang Technological University, 637553, Singapore;
NOVFTAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore;
molecular beam epitaxy; Ⅲ-Ⅴ nitrides; dislocations; AlGaN/AlN; stress mitigating layers; si-diffusion; SIMS; TEM;
机译:氨分子束外延在100mm Si(111)上的AlGaN / AlN应力缓解层上生长的GaN中的拉伸应变起源
机译:AlN / GaN应力缓解层的应变状态及其对100mm Si(111)上氨分子束外延生长的GaN缓冲层的影响
机译:AIN / GaN应力缓解层的应变状态及其对100mm Si(111)上氨分子束外延生长的GaN缓冲层的影响
机译:GaN缓冲层厚度对等离子辅助分子束外延技术在Si(111)衬底上生长的AlGaN / GaN基高电子迁移率晶体管结构的结构和光学性能的影响
机译:InAsBi体层和量子阱中分子束外延生长的结构和光学性质
机译:氢化物气相外延生长在AlN纳米图案蓝宝石模板上的AlGaN外延层的结构和应力特性
机译:使用氨分子束外延在4H-siC(0001)和si(111)衬底上以低生长速率生长的高质量alN(0001)层的原位NC-aFm测量
机译:分子束外延生长的alGaN / GaN高电子迁移率晶体管中陷阱的光电离光谱;杂志文章