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机译:Si(001)上GaAs外延膜的原位三维X射线互易空间映射
Quantum Beam Science Directorate, Japan Atomic Energy Agency, Sayo-cho, Hyogo 679-5148, Japan,University of Hyogo, Kamigori-cho, Hyogo 678-1297, Japan;
University of Hyogo, Kamigori-cho, Hyogo 678-1297, Japan;
Interdisciplinary Research Organization, Miyazaki University, Miyazaki, Miyazaki 889-2192, Japan;
Toyota Technological Institute, Nagoya, Aichi 468-8511, Japan;
University of Hyogo, Kamigori-cho, Hyogo 678-1297, Japan;
Quantum Beam Science Directorate, Japan Atomic Energy Agency, Sayo-cho, Hyogo 679-5148, Japan;
Toyota Technological Institute, Nagoya, Aichi 468-8511, Japan;
A1. X-ray diffraction; A1. Nucleation; A1. Planar defects; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide; B2. Semiconducting silicon;
机译:GaAs(001)上外延MnAs薄膜的微观结构:原位X射线研究
机译:CaF 2(001)的外延Ni纳米颗粒,(110)和(111)表面由三维Rheed,GIXD和GISAXS往复式空间映射技术研究
机译:勘误:“ InGaAs / GaAs(001)外延生长过程中位错介导的应变弛豫的X射线倒易位图” [J.应用物理110,113502(2011)]
机译:外延高饱和磁化强度FEN Fe(001)播种GaAs(001)单晶晶片使用面向目标溅射
机译:银(001)和银(111)上超薄外延铬和氧化铁膜的生长和结构:通过X射线光电子衍射和低能电子衍射完成的综合研究。
机译:(100)/(001)取向四方外延Pb(Zr0.4Ti0.6)O3薄膜在电场作用下超快90°域转换的原位观察
机译:GAAS上的表皮单晶超薄膜FE3SI薄膜的磁性
机译:部分离子束沉积技术低温外延生长CoGe(001)/ Gaas(100)薄膜