AlGalnAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 Jim grown by MOVPE on InP substrate

摘要

In this paper we present the first InP-based short-cavity Vertical-Cavity Surface-Emitting Laser with an AlGalnAsP/CalnAsP active region and a re-grown and structured GaAs_(0.51)Sb:C/Ga_(0.47)InAs:Si buried tunnel junction (BTJ), which serves as current aperture, grown by LP-MOVPE. We achieved over 1 mW single-mode continuous-wave (cw) emission at around 1.3 μm wavelength and room-temperature. The small-signal modulation bandwidth exceeds 7.5 GHz, which is appropriate for lOGb/s data transmission, and the series resistance is as low as 24 Ω. The latter value indicates around three times lower dissipated power consumption than comparable MOVPE grown InP-based VCSELs.