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机译:分子束外延生长的自支撑共混氮化镓GaN层的掺杂
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK;
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK;
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK;
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK;
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK;
A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials;
机译:通过分子豆外延工艺生长的自立共混锌(立方)GaN衬底
机译:分子束外延生长作为实现自立共混GaN和纤锌矿Al_xGa_(1-x)N的生长技术
机译:分子束外延生长自立块状闪锌矿GaN和AlGaN晶体的方法
机译:通过分子束外延过程种植的独立锌 - 闪烁(立方)GaN基材
机译:分子束外延生长掺杂杂质的ZnSe层的光致发光和电学性质
机译:分子束外延生长GaN基体中准2D InGaN的激子发射
机译:通过分子束外延生长的自支撑掺锌混合GaN层的掺杂
机译:分子束外延生长mg掺杂GaN同质外延层的光学和磁共振研究。