Surface and bulk passivation of defects in GaAs/Si by RF plasma-assisted MOCVD

摘要

Surface phosphidization and bulk hydrogenation of defects in GaAs epilayers grown on Si substrate (GaAs/Si) was realized simultaneously by exposure to a metal-organic chemical vapor deposition (MOCVD) reactor-associated PH_3+H_2 RF plasma generator. X-ray photoelectron spectroscopy analysis reveals that a phosphidized layer was Formed which removed the native As oxide from the GaAs/Si surface.