MOCVD growth of highly strained InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 μm emission

摘要

1.27 μm InGaAs:Sb-GaAs-GaAsP vertical cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) with superior performance. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops below ～35% when the temperature is raised from room temperature to 70℃. With only 5mA of bias current, the 3dB modulation frequency response is measured to be 8.36GHz which is suitable for 10Gb/s operation. The maximal bandwidth is estimated to 10.7GHz with modulation current efficiency factor (MCEF) of ～5.25 GHz/(mA). The results of InGaAs:Sb-GaAs-GaAsP VCSELs can reach a performance level comparable to GaInAsN VCSELs with better thermal stability and should be considered as a very promising candidate for 1.3 μm commercial applications.