Metalorganic vapor-phase epitaxy of cubic GaN on GaAs (100) substrates by inserting an intermediate protection layer

摘要

A GaN intermediate protection layer, inserted between the low-temperature-grown buffer layer and the high- temperature-grown GaN epilayer, was used for growing cubic GaN on GaAs (100) substrates by metalorganic vapor-phase epitaxy. The intermediate protection layer was grown at moderate temperatures to prevent GaAs substrate from thermal decomposition.