Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors

摘要

GaAs and AlGaAs were deposited on silicon for the first time using conformal MOVPE growth, a lateral epitaxial overgrowth technique. Since this method requires selective growth, the chlorine-containing precursors dimethylgallium- chloride (DMGaCl) and dimethylaluminumchloride (DMAlCL) were used to prevent polycrystalline nucleations on the dielectric mask and the silicon substrate.