Conformal deposition of silicon carbide films using heterogeneous precursor interactions

摘要

Doped or undoped silicon carbide films can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to the reaction chamber. A radical species, such as a hydrogen radical species, is provided in a substantially low energy state or ground state and interacts with one or more silicon-containing precursors to deposit a silicon carbide film. The co-reactant material may flow together with one or more silicon-containing precursors, and the co-reactant material may be a deposition additive or a non-deposition additive to increase the step coverage of the silicon carbide film.