Growth and recrystallization of CeO_2 thin films deposited on R-plane sapphire by off-axis RF sputtering

摘要

The microstructure of ()1 0 0)-oriented epitaxial CeO_2 thin layers grown on R-plane sapphire (AL_@O_3) by off-axis RF sputtering was investigated. The crystalline perfection of CeO_2 layers was characgerized by Bragg-Brentano X-ray spectra, rocking curves (ω-scan) and TEM. The surface morphology was controlled by AFM. The as-deposited layers display smal size mosaicity (～ 20 nm), arcing 6-7 deg, and surface roughness ≈4 nm.