A surface kinetics model for the growth of Si_(1-x)Ge_x by UHV/CVD using SiH_4/GeH_4

摘要

The surface reaction mechanism of Si_(1-x)Ge_x growth using SiH_4 and GeH_4 in UHV/CVD system was studied. The saturated adsorption and desorption of SiH_4 from Si(1 0 0) surface was investigated with the help of TPD and RHEED, and it was found that all the 4 hydrogen atoms of one SiH_4 molecule were adsorbed to the Si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacanices. The analysis of the reaction of GeH_4 was also done.