Effect of substrates on morphoogical evolution of a film in the silicon CVD process: approach by charged cluster model

摘要

Film morphology depends on the types of substrate used in the CVD process. This dependency has been studied based on the charged cluster modelin the silicon CVD process. Three exists a strong correlation between microstructure evolution and the charge transfer rate (CTR) of substrate materials. Films tended to be porous on substrates with a high CTR and dense onsubstrates with low CTR. The microstructure evolution could be explained by the interaction of charged clusters with the substrate.