Periodic doping of GaAs: Zn p-type nano-clusters in ZnSe grown by metalorganic molecular-beam epitaxy

J. Hirose; I. Suemune; A. Ueta; H. Machida; N. Shimoyama

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Periodic doping of GaAs: Zn p-type nano-clusters in ZnSe grown by metalorganic molecular-beam epitaxy

机译：金属有机分子束外延生长GaAs的周期性掺杂：ZnSe中的Zn p型纳米团簇

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Nitrogen (N) acceptor doping in ZnSe has been difficult with metalorganic vapor-phase epitaxy or metalorganic molecular-beam epitaxy (MOMBE) due to the neutralization effect by the N-hydrogen bonding. Doping of nano-clusters of p-type GaAs in ZnSe is proposed for realizing p-type ZnSe. A initial growth process of GaAs on ZnSe surfaces was studied to realize the doping of GaAs nano-clusters. A net acceptor concentration of 1 x 10~(17) cm~(-3) was observed by this method with MOMBE.

机译：ZnSe中的氮（N）受体掺杂很难通过金属有机气相外延或金属有机分子束外延（MOMBE）进行，这是由于N-氢键的中和作用所致。为了实现p型ZnSe，提出了在ZnSe中掺杂p型GaAs纳米簇的方法。研究了GaSe在ZnSe表面上的初始生长过程，以实现GaAs纳米团簇的掺杂。用MOMBE通过该方法观察到的净受体浓度为1 x 10〜（17）cm〜（-3）。

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来源
《Journal of Crystal Growth》 |2000年第2000期|p.524-528|共5页
作者
J. Hirose; I. Suemune; A. Ueta; H. Machida; N. Shimoyama;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
acceptors; doping; ZnSe; MOMBE; GaAs; clusters;

机译：受体;掺杂;ZnSe;MOMBE;GaAs;团簇;

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1. Periodic doping of GaAs: Zn p-type nano-clusters in ZnSe grown by metalorganic molecular-beam epitaxy [J] . J. Hirose, I. Suemune, A. Ueta Journal of Crystal Growth . 2000,第期

机译：金属有机分子束外延生长GaAs的周期性掺杂：ZnSe中的Zn p型纳米团簇
2. Activation Energies Of The Acceptor-bound Excitons And The Donor-acceptor Pairs In Nitrogen-doped P-type Znse, P-type Zns_yse_(1-y), And P-type Zn_(1-x)mg_xs_yse_(1-y) Epitaxial Films Grown On Gaas (1 0 0) Substrates [J] . H.J. Kim, B.J. Kim, T.W. Kim, Applied Surface Science . 2009,第9期

机译：氮掺杂的P型Znse，P型Zns_yse_（1-y）和P型Zn_（1-x）mg_xs_yse_（1-y）外延受体的激子和给体-受体对的活化能Gaas（1 0 0）衬底上生长的薄膜
3. Nitrogen-doped p-type ZnO thin films and ZnO/ZnSe p-n heterojunctions grown on ZnSe substrate by radical beam gettering epitaxy [J] . I.V. Rogozin Thin Solid Films . 2009,第15期

机译：氮离子掺杂的外延生长在ZnSe衬底上生长的氮掺杂p型ZnO薄膜和ZnO / ZnSe p-n异质结
4. Hydrogenation of undoped and nitrogen-doped CdTe and ZnSe grown by molecular-beam epitaxy [C] . L.S.Hirsch, S.D.Setzler, A.J.Ptak, Hydrogen in semiconductors and metals . 1998

机译：分子束外延生长未掺杂和氮掺杂的CdTe和ZnSe的氢化
5. Photoluminescence and Electrical Properties of Impurity-doped ZnSe Layers Grown by Molecular Beam Epitaxy利用統計を見る [D] . Ohkawa Kazuhiro 1992

机译：分子束外延生长掺杂杂质的ZnSe层的光致发光和电学性质
6. Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping [O] . Goutam Kumar Dalapati, Terence Kin Shun Wong, Yang Li, 2012

机译：利用原子层沉积的TiO2 / Al2O3栅叠层表征外延GaAs MOS电容器：Ge自掺杂和p型Zn掺杂的研究
7. P-type and N-type doping in GaSb and Ga{sub 0.8}In{sub 0.2}Sb layers grown by metalorganic vapor phase epitaxy [O] . Ehsani, H., Bhat, I., Hitchcock, C., 1998

机译：通过金属有机气相外延生长的Gasb和Ga {sub 0.8} In {sub 0.2} sb层中的p型和N型掺杂
8. Trap Suppression by Isoelectronic In or Sb Doping in Si-Doped n-GaAs Grown by Molecular-Beam Epitaxy [R] . Li, A. Z., Kim, H. K., Jeong, J. C., 1988

机译：分子束外延生长的si掺杂n-Gaas中等电子In或sb掺杂对陷阱的抑制

Periodic doping of GaAs: Zn p-type nano-clusters in ZnSe grown by metalorganic molecular-beam epitaxy

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