首页> 外文期刊>Journal of Crystal Growth >Transient three-dimensional numerical computation for unsteady oxygen concentration in a silicon melt during a Czochralski process under a cusp-shaped magnetic field
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Transient three-dimensional numerical computation for unsteady oxygen concentration in a silicon melt during a Czochralski process under a cusp-shaped magnetic field

机译:尖端形状磁场下切克劳斯基过程中硅熔体中不稳定氧浓度的瞬态三维数值计算

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This paper presents numerical computation for the transient oxygen concentration of a silicon melt in a Czochralski process under a cusp-shaped magnetic field. Transient three-dimensional numerical calculations were carried out for two cases of Ha=0 and 161 for pr=0.013, Ra=3.92, Re_cr=-1596 and Sc=5.5. The SIMPLE algorithm was employed. The oxygen concentration at a fixed point has a periodic oscillation as a function of time. The local and average Oxygen concentrations in the silicon melt were less with a cusp-shaped magnetic field than those without a magnetic Field. The power spectral density for the oxygen concentration fluctuation was also computed.
机译:本文提出了在尖顶形磁场下切克劳斯基过程中硅熔体瞬态氧浓度的数值计算。对于pr = 0.013,Ra = 3.92,Re_cr = -1596和Sc = 5.5的Ha = 0和161两种情况进行了瞬态三维数值计算。使用了SIMPLE算法。固定点处的氧气浓度具有随时间变化的周期性振荡。具有尖峰形磁场的情况下,硅熔体中的局部和平均氧气浓度比没有磁场的情况低。还计算了氧浓度波动的功率谱密度。

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