首页> 外国专利> Czochralski crystal growth process uses mutually orthogonal current and magnetic field passage through the melt

Czochralski crystal growth process uses mutually orthogonal current and magnetic field passage through the melt

机译:直拉晶体生长过程使用相互正交的电流和穿过熔体的磁场

摘要

Czochralski semiconductor single crystal growth involves supplying a current through the semiconductor melt (4) in a direction perpendicular to a magnetic field (11) generated in the melt. An Independent claim is also included for a Czochralski semiconductor single crystal growth apparatus in which the above process is carried out. Preferred Features: The current is supplied by one or more immersed electrodes (7). The magnetic field is generated perpendicular to the crystal growth front and axially symmetrical with respect to the crystal pulling shaft. Alternatively, the magnetic field is generated parallel to the crystal growth front and/or may converge to a point.
机译:直拉半导体单晶生长涉及在垂直于熔体中产生的磁场(11)的方向通过半导体熔体(4)的电流。对于其中进行了上述过程的切克劳斯基半导体单晶生长设备也包括独立权利要求。优选特征:电流由一个或多个浸入电极(7)提供。产生的磁场垂直于晶体生长前沿,并且相对于晶体提拉轴轴向对称。可替代地,磁场平行于晶体生长前沿产生和/或可以会聚到一点。

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