Simulation of radial dopant segregation in vertical Bridgman growth of GaSe, a semiconductor with anisotropic solid-phase thermal conductivity

摘要

For a range of growth conditions of practical interest, we simulate liquid- and solid-phase dopant distributions and radial segregation for several dopants (In, Sn, Cu, Se, Zn, and Cd) in vertical Bridgman growth of the nonlinear optical material gallium monoselenide.