首页> 外国专利> Analysing gases by electroconductivity of semiconductors - for which gas is dopant, esp. for pollution level determn.

Analysing gases by electroconductivity of semiconductors - for which gas is dopant, esp. for pollution level determn.

机译:通过半导体的电导率分析气体-尤其是对于气体而言,其为掺杂剂。由污染程度决定。

摘要

Gas is detected and analysed by contacting the medium contg. the gas with a semiconductor membrane for which the gas to analyse is a dopant. The variations in electrical conductivity of the doped semiconductor are measured. Specifically, an atmospheric pollution measurement appts. comprises a gas collector comprising a sealed enclosure which contains the semiconductor in teh forn of a thin membrane associated with an insulating support and an electrode system; a source of tension linked to the electrode system; and a measuring circuit with a high impedance entry enabling electrical conductivity measurements as a function of the content of the gas to be analysed. Pref. the semiconductor is a metal oxide. Process is simpler, quicker and more precise than previous methods.
机译:通过接触介质contg来检测和分析气体。带有半导体膜的气体,要分析的气体是掺杂剂。测量掺杂半导体的电导率的变化。具体而言,适用大气污染测量。包括一个气体收集器,该气体收集器包括一个密封的外壳,该外壳包含与绝缘支座和电极系统相连的薄膜中的半导体。与电极系统有关的张力源;具有高阻抗输入的测量电路使得能够根据待分析的气体含量来测量电导率。首选半导体是金属氧化物。与以前的方法相比,过程更简单,更快,更精确。

著录项

  • 公开/公告号FR2364449A1

    专利类型

  • 公开/公告日1978-04-07

    原文格式PDF

  • 申请/专利权人 ISSEC LABO PHYSICOCHIM APPLIQUEE;

    申请/专利号FR19760027233

  • 发明设计人

    申请日1976-09-10

  • 分类号G01N27/12;

  • 国家 FR

  • 入库时间 2022-08-22 21:44:55

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