The present invention is a single crystal growth apparatus of vertical temperature gradient cooling and vertical bridging method that can apply a magnetic field of about 1600 gauss in the direction of crystal growth axis by installing a ring-shaped electromagnet around a high-temperature electric furnace, and changes in temperature gradient sensitive to crystal growth. In addition to forming a double tube through which the cooling water circulates inside the high-temperature electric furnace, a gold thin film is coated on the inner circumferential surface thereof, and a cylindrical insulation blanket or protection between the heating wire and the double tube is primarily used to absorb infrared rays emitted from the heating wire. By installing a quartz tube to effectively apply the magnetic field of the electromagnet, it is possible to grow a low defect, large diameter gallium arsenide single crystal.
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