Vertical temperature gradient cooling and vertical bridges capable of applying an axial magnetic field only Compound semiconductor single crystal growth device

摘要

The present invention relates to a vertical gradient cooling and vertical bridging only single crystal growth apparatus capable of applying a magnetic field of about 1600 gauss in the direction of a crystal growth axis by installing a ring type electromagnet around a high temperature electric furnace, And the inner surface of the inner circumferential surface is coated with a gold foil film, and a cylindrical insulating blanket or protection is provided between the hot wire and the double tube so as to primarily absorb the infrared rays emitted from the hot wire inside. A quartz tube is installed so that the magnetic field of the electromagnet is effectively applied to grow a low-defect, large-diameter gallium arsenide single crystal.