Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals

I.Yu.Evstratov; V.V.Kalaev; A.I.Zhmakin

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Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals

机译：Si晶体Czochralski生长过程中非定常三维湍流熔体流动的模型分析

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摘要

We describe a computational model based on Large Eddy Simulation to calculate 3D unsteady turbulent melt convection in Czchralski systems for Si-crystal growth. The model has been verified using temperature measurements inside the melt and along the melt-crucible surface.

机译：我们描述了一种基于大涡模拟的计算模型，用于计算Czchralski系统中3D非稳态湍流对流以进行Si晶体生长。使用熔体内部和熔体坩埚表面的温度测量值对模型进行了验证。

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来源
《Journal of Crystal Growth》 |2001年第2期|p.22-29|共8页
作者
I.Yu.Evstratov; V.V.Kalaev; A.I.Zhmakin;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1.Fluid flows; A1.Computer simulation; A2.Czochralski method;

机译：A1。流体流动;A1。计算机仿真;A2.Czochralski方法;

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Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals

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