Hexagonal GaN_1-xP_x growth by laser-assisted metalorganic chemical vapor deposition

摘要

The growth of nitride-rich gaN_1-xP_x using laser-assisted metalorganic chemical vapor deposition (LA-MOCVD) in order to obtain N-rich GaN_1-xP_x with a larger composition ratio (x) was tried for the first time. An ArF (193 nm) laser was used for the low temperature decomposition of source gases. Trimethylgallium (TMG), ammonia (NH_3) and tertialbutylphosphine (TBP) were used as source gases.