Gas source MBE growth of T1InGaAs/InP DH structures for the application to WDM optical fiber communication systems

摘要

T1InGaAs/InP double heterostructures (DHs) were grown on (100) InP substrates by gas source MBE. The photoluminescence (PL) peak energy and its variation with temperature decreased with increasing T1 composition. For the DH with a T1 composition of 13/100, the PL peak energy varied only slightly with temperature (-0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K).