Growth and layer structure optimization of 2.26 μm (A1GaIn)(AsSb) diode lasers for room temperature operation

摘要

The optimization of MBE growth conditions and layer structures for room temperature operation of 2.26 μm A1GaAsSb/GaInAsSb laser structures is investigated. Index guided triple quantum well large optical cavity diode lasers With 64 μm×1000 蘭 cavities and high reflection/antireflection coated facets reveal a cw output power of 350 mW at T=280 K. An internal quantum efficiency ηi of 69/100, internal losses ai of 7.7 cm~-1 and a threshold current density for Infinite cavity length of j_∞=144 A/cm~2 are obtained for this structure.