Blue-green laser diode operation of CdZnSe/ZnSe MQW structures grown on InGaP band offset reduction layers

摘要

A novel contact technology using In(Ga,Al)P layers, lattice matched to p-type GaAs, is proposed for low voltage operation in ZnSe-based laser diodes (LDs). Laser operation is demonstrated at 77K in CdZnSe/ZnSe multiquantum well LDs grown on InGaP band offset reduction layers for the first time.