GSMBE growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT

摘要

In this paper we report for the first time gas-source molecular beam epitaxy of both n- and p-channel InGaP/ (In)GaAs modulation-doped heterostructure. The sheet density dependence of the two-dimensional hole gas (2DHG) mobility of p-type In_0.49Ga_0.51P/GaAs structures was investigated by Van der Paul Hall measurement at 300 and 77 K. The 2DHG densities of 2.78×10~12 and 1.02×10~12 cm~-2 with mobilities of 191 and 2831 cm~2/Vs at 300 and 77 K, Respectively, for In_0.49Ga_0.51P/GaAs structures have been achieved.