首页> 外文期刊>Journal of Crystal Growth >Growth of single crystals (Ga,Sr)_10Cu_17O_29 by 'melted band' method from Bi-containing fluxes and formation of subsidiary phases
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Growth of single crystals (Ga,Sr)_10Cu_17O_29 by 'melted band' method from Bi-containing fluxes and formation of subsidiary phases

机译:通过“熔融带”法从含Bi的助熔剂中生长出单晶(Ga,Sr)_10Cu_17O_29并形成辅助相

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摘要

The series of (M_2Cu_2O_3)_m(CuO_2)_n(M=Ca,Sr,Bi,m=5,n=7) single crystals was grown and investigated by XRD structural and phase analysis. The temperature regimes for the formation of the main and subsidiary phases were specified.
机译:生长(M_2Cu_2O_3)_m(CuO_2)_n(M = Ca,Sr,Bi,m = 5,n = 7)单晶系列,并通过XRD结构和相分析对其进行研究。规定了形成主相和辅助相的温度范围。

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