Phase diagram of the CaS-Ga_2S_3 system and melt growth of CaGa_2S_4 single crystals

摘要

ew have constructed the pseudo-binary phase diagram of the CaS-Ga_2O_3 system in order to prepare single crystals of Caga_2S_4. Based on the diagram, single crystals doped with 0.1, 0.2 0.4, 0.8 and 1.5 wt/100 Ce~3+ are grown from melt by The horizontal Bridgman method. Photoluminescence spectra of these crystals are measured at room temperature. The Overall features are in good agreement with the reported data of thin films. However, the emission intensity does not Show a linear relation ship with doped Ce~3+ concentration at more than 0.4 wt/100, presumably because of the Precipitates arising from the overdoping.