Dynamical faceting and nanoscale lateral growth of GaAs by molecular beam epitaxy

摘要

Dynamical faceting during homoepitaxial growth of GaAs on nanoscale-patterned surfaces by molecular beam epitaxy is examined. Selective deposition on open GaAs (100) surfaces with lateral dimensions ranging from 130 to 250 nm, separated by 15-80 nm-wide (25-nm-thick) SiO_2 stripes aligned along the [011] direction results in facet formation and lateral growth over the SiO_2 mask. At the early stage of growth, (311) facets appear on sidewalls near the boundary between an open GaAs surface and SiO_2 mask, these are replaced by (111) facets starting from SiO_2 bounbaries as growth continues.