Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime

摘要

In this paper, we present a novel compact model for channel noise in FETs where the effects of far-from-equilibrium transport are considered in a fundamental way. The intermediate range between the drift-diffusion and the ballistic transport regimes is covered through an analytical treatment based on Buettiker virtual probes approach to inelastic scattering. The channel noise is interpreted as due to the contribution of thermal noise at the source end and of shot noise associated with local ballistic transport at the drain end. The model can be improved through the inclusion of Fermi and Coulomb correlations, that provide a significant suppression of shot noise.