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机译:衬底取向对自组装InAs / GaAs量子点中光电性能的影响
Department of Electrical and Computer Engineering, Southern Illinois University at Carbondale, 1230 Lincoln Drive, Carbondale, IL 62901, USA;
Chemistry Department, Brookhaven National Laboratory, Upton, NY 11973-5000, USA;
Department of Electrical and Computer Engineering, Southern Illinois University at Carbondale, 1230 Lincoln Drive, Carbondale, IL 62901, USA;
InAs/GaAs quantum dots; Substrate orientation; Piezoelectricity; Symmetry lowering; Optical anisotropy; Tight-binding;
机译:勘误至:衬底取向对自组装InAs / GaAs量子点中光电性能的影响(第13卷,第1026页,2014年)
机译:金属有机化学气相沉积法生长的InAs / GaAs自组装量子点激光器-生长后退火对堆叠的InAs量子点的影响
机译:快速热退火对被InAlAs / InGaAs层覆盖的自组装InAs / GaAs量子点的结构和光学性质的影响
机译:衬底取向对分子束外延生长长波长发射自组装InAs / GaAs量子点的影响
机译:自组装的InAs / GaAs /量子点太阳能电池。
机译:GaAs衬底取向对InAs量子点的影响:表面形态临界厚度和光学性质
机译:量子点尺寸依赖于衬底取向对衬底取向的影响 Inas / Gaas量子点的电子和光学性质
机译:退火对Gaas基体中自组装Inas量子点和润湿层的影响