Discrete geometric approach for modelling quantization effects in nanoscale electron devices

摘要

This paper presents the solution of the Schrodin-ger-Poisson coupled problem for nanoscale electron devices obtained by means of the Discrete Geometric Approach (DGA). The paper illustrates a self-contained description of the DGA method for a Schroedinger-Poisson problem, discusses its implementation and compares the results of the DGA with respect to the ones obtained by the well established Pseudo-spectral (PS) method for two technologically relevant benchmark devices (i.e. a nanowire and a FinFET). Finally, the paper examines the merits of the DGA approach with respect to the Finite Differences (FD) and Finite Elements (FE), that are the most frequently used methods in the electron device community.