Performance evaluation of a lateral trench-gate power MOSFET on InGaAs

摘要

In this paper, an integrable lateral trench-gate metal-oxide-semiconductor (LTGMOS), a power MOSFET on In_(0.53)Ga_(0.47)As is presented. The device consists of two separate trenches built in the drift region in which two gates are placed on both sides of the P-body region. The trench-gate structure not only enhances the drain current due to parallel conduction of two channels but also causes the reduced-surface-field effect in the device resulting significant improvement in the device performance. Two-dimensional numerical simulations have been performed to analyse and compare the performance of the proposed device with that of the conventional lateral MOSFET. The LTGMOS provides 2.3 times higher output current, 29 % decrease in threshold voltage, 42 % reduction in ON-resistance, 47 % improvement in peak transconductance, two times higher breakdown voltage, and 5.8 times improvement in the figure-of-merit over the conventional device for the same cell pitch.