Low-k polymer gate dielectric selection for organic thin-film transistors (OTFTs) using material selection methodologies

摘要

Performance parameters of an organic thin-film transistor (OTFT) and their relation to the material parameters of the gate dielectric are analyzed. Based on the analysis, the surface energy, dielectric constant, glass-transition temperature, and breakdown field are identified as key parameters. Various multicriteria decision-making approaches, viz. multiobjective optimization using simple ratio analysis (MOOSRA), technique for order preference by similarity to ideal solution (TOPSIS) and Vlsekriterijumska Optimizacija I KOmpromisno Resenje (VIKOR), are used to solve the material selection problem. Various low-k polymers are analyzed, and it is observed that CYTOP is a promising gate dielectric material for OTFTs, with good agreement between the MOOSRA, VIKOR, and TOPSIS regarding this choice.