...
机译:Stone-Wales缺陷对基于石墨烯-纳米核的肖特基二极管性能的影响
Islamic Azad Univ, Qazvin Branch, Dept Elect Comp & Biomed Engn, Qazvin, Iran;
Amirkabir Univ Technol, Dept Elect Engn, 424 Hafez Ave, Tehran, Iran;
Urmia Univ, Nanotechnol Res Ctr, Nanoelect Grp, Orumiyeh 57147, Iran;
Swinburne Univ Technol, Dept Elect Elect & Comp Syst, Melbourne, Vic, Australia;
Univ Teknol Malaysia, Fac Elect Engn, Johor Baharu 81310, Malaysia;
Stone-Wales defect; Graphene nanoribbon; Energy band structure; Density of states; Carrier concentration; Current density;
机译:石威尔士缺陷对石墨烯 - 纳米波氏肖特基二极管性能的影响
机译:4H-SiC肖特基势垒二极管,结屏障肖特基二极管和引脚二极管的温度传感性能比较
机译:利用N型GaN深度缺陷的Ni / GaN肖特基屏障抗冲击电离电离电离电离电离电离的性能
机译:外延层生长参数对肖特基二极管缺陷密度及电气特性的影响
机译:热,应变和中子辐照对AlGaN / GaN高电子迁移率晶体管和GaN肖特基二极管中缺陷形成的影响
机译:各种缺陷对4H-SiC肖特基二极管性能的影响及其与外延生长条件的关系
机译:肖特基势垒微波混频器二极管/
机译:中子辐照Gaas肖特基二极管和激光二极管退化的缺陷水平。