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A 20-MHz BW MASH Sigma-Delta Modulator with Mismatch Noise Randomization for Multi-Bit DACs

机译:一个20-MHz BW MASH SIGMA-DERTA调制器,具有多位DAC的错配噪声随机化

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A high-linearity Multi-stAge noise SHaping (MASH) 2-2-2 sigma-delta modulator (SDM) for 20-MHz signal bandwidth (BW) was presented. Multi-bit quantizers were employed in each stage to provide a sufficiently low quantization noise level and thus improve the signal-to-noise ratio (SNR) performance of the modulator. Mismatch noise in the internal multi-bit digital-to-analog converters (DACs) was analyzed in detail, and an alternative randomization scheme based on multi-layer butterfly-type network was proposed to suppress spurious tones in the output spectrum. Fabricated in a 0.18-mu m single-poly 4-metal Complementary Metal Oxide Semiconductor (CMOS) process, the modulator occupied a chip area of 0.45 mm(2), and dissipated a power of 28.8 mW from a 1.8-V power supply at a sampling rate of 320 MHz. The measured spurious-free dynamic range (SFDR) was 94 dB where 17-dB improvement was achieved by applying the randomizers for multi-bit DACs in the first two stages. The peak signal-to-noise and distortion ratio (SNDR) was 76.9 dB at -1 dBFS @ 2.5-MHz input, and the figure-of-merit (FOM) was 126 pJ/conv.
机译:提出了20-MHz信号带宽(BW)的高线性多级噪声形状(MASH)2-2-2Σ-Δ调制器(SDM)。在每个阶段采用多比特量化器以提供足够低的量化噪声水平,从而提高调制器的信噪比(SNR)性能。详细分析内部多位数模转换器(DACS)中的不匹配噪声,并提出了一种基于多层蝴蝶型网络的替代随机化方案来抑制输出频谱中的杂散音调。在0.18-mu m单聚4金属互补金属氧化物半导体(CMOS)工艺中制造,调制器占用0.45mm(2)的芯片面积,并从1.8V电源耗散28.8兆瓦的功率采样率为320 MHz。测量的无杂散动态范围(SFDR)为94dB,通过在前两个阶段应用于多位DAC的随机剂来实现17dB改进。峰值信号 - 噪声和失真率(SNDR)为-1 dBFS @ 2.5-MHz输入为76.9 dB,而且值(FOM)为126 pj / conc。

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