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Review: Static and Dynamic Analysis Methods for Multi-Branch Biasing Circuits

机译:综述:多分支偏置电路的静态和动态分析方法

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摘要

The fundamental theories and primary structures for the multi-branch self-biasing circuits are reviewed in this paper. First, the Delta V/R and V/R structures illustrating the static current definition mechanism are presented, including the conditions of starting up and entering into a stable equilibrium point. Then, the AC method based on the loop gain evaluation is utilized to analyze difierent types of circuits. On this basis, the laws which can couple the branches of self-biasing circuits to construct a suitable close feedback loop are summarized. By adopting Taiwan Semiconductor Manufacturing Company (TSMC)'s 0.18 mu m complementary metaloxide-semiconductor (CMOS) process with 1.8 V supply voltage, nearly all the circuits mentioned in the paper are simulated in the same branch current condition, which is close to the corresponding calculated results. Therefore, the methods summarized in this paper can be utilized for distinguishing, constructing, and optimizing critical parameters for various structures of the self-biasing circuits.
机译:本文回顾了多分支自偏置电路的基本理论和主要结构。首先,介绍了说明静态电流定义机制的Delta V / R和V / R结构,包括启动和进入稳定平衡点的条件。然后,基于环路增益评估的交流方法被用于分析不同类型的电路。在此基础上,总结了可以耦合自偏置电路分支以构建合适的闭合反馈环路的定律。采用台湾半导体制造公司(TSMC)的0.18μm互补金属氧化物半导体(CMOS)工艺,电源电压为1.8 V,几乎所有本文提到的电路都是在相同的支路电流条件下进行仿真的,这接近于相应的计算结果。因此,本文总结的方法可用于区分,构造和优化自偏置电路各种结构的关键参数。

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