NOVEL HIGH VOLTAGE SILICON-ON-INSULATOR DEVICE WITH COMPOSITE DIELECTRIC BURIED LAYER

摘要

A novel silicon-on-insulator (SOI) high voltage device with a composite dielectric buried layer (CD SOI) is proposed in this paper. In the proposed structure, the composite dielectric buried layer consists of Si_3N_4 dielectric and low-k (relative permittivity) dielectric. The electric field strength in the buried layer is enhanced by the low-k dielectric. The Si_3N_4 dielectric in the buried layer not only modulates the electric field distribution in the drift region, but also provides a heat conduction path for the SOI layer and alleviates the self-heating effect (SHE). The breakdown voltage (BV) = 362 V for CD SOI is obtained by simulation on a 1 μm SOI layer over 2 μm buried layer, which is enhanced by 26% compared with that of conventional SOI.