机译:28 nm CMOS LC振荡器差分拓扑中的相位噪声分析:Armstrong,Colpitts,Hartley和共源交叉耦合对
Tyndall Natl Inst, Cork, Ireland|Natl Univ Ireland Univ Coll Cork, Dept Elect & Elect Engn, Cork, Ireland;
Tyndall Natl Inst, Cork, Ireland;
Tyndall Natl Inst, Cork, Ireland|Natl Univ Ireland Univ Coll Cork, Dept Elect & Elect Engn, Cork, Ireland;
Armstrong; CMOS; Colpitts; common-source cross-coupled differential pair; Hartley; nanoscale; oscillator topologies; phase noise; radiofrequency;
机译:28 nm CMOS LC振荡器电路拓扑中相位噪声的比较分析:Hartley,Colpitts和共源交叉耦合差分对
机译:双极型Colpitts振荡器的1 / f2相位噪声分析(双极差动对LC振荡器的偏差)
机译:双极型Colpitts振荡器的$ 1 / f ^ {2} $相位噪声分析(与双极型差分对LC振荡器有偏差)
机译:共源交叉耦合对和Armstrong差分拓扑中的相位噪声比较
机译:低压低相位噪声高频CMOS LC压控振荡器的新架构。
机译:28 nm CMOS LC振荡器电路拓扑中的相位噪声的比较分析:HartleyColpitts和共源交叉耦合差分对
机译:28 nm CMOS LC振荡器差分拓扑中相位噪声分析:Armstrong,Colpitts,Hartley和共源交叉耦合对