首页> 外文期刊>Journal of circuits, systems and computers >Analysis of Phase Noise in 28 nm CMOS LC Oscillator Differential Topologies: Armstrong, Colpitts, Hartley and Common-Source Cross-Coupled Pair
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Analysis of Phase Noise in 28 nm CMOS LC Oscillator Differential Topologies: Armstrong, Colpitts, Hartley and Common-Source Cross-Coupled Pair

机译:28 nm CMOS LC振荡器差分拓扑中的相位噪声分析:Armstrong,Colpitts,Hartley和共源交叉耦合对

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Comparative Phase Noise analyses of common-source cross-coupled pair, Colpitts, Hartley and Armstrong differential oscillator circuit topologies, designed in 28 nm bulk CMOS technology in a set of common conditions for operating frequencies in the range from 1 GHz to 100 GHz, are carried out in order to identify their relative performance. The impulse sensitivity function (ISF) is used to carry out qualitative and quantitative analyses of the noise contributions exhibited by each circuit component in each topology, allowing an understanding of their impact on phase noise. The comparative analyses show the existence of five distinct frequency regions in which the four topologies rank unevenly in terms of best phase noise performance. Moreover, the results obtained from the ISF show the impact of flicker noise contribution as the major effect leading to phase noise degradation in nanoscale CMOS LC oscillators.
机译:比较了共源交叉耦合对,Colpitts,Hartley和Armstrong差分振荡器电路拓扑的相位噪声比较,这些拓扑是在一组常见条件下针对28 GHz CMOS工艺设计的,工作频率范围为1 GHz至100 GHz。进行以识别其相对性能。脉冲敏感度函数(ISF)用于对每个拓扑中每个电路组件表现出的噪声贡献进行定性和定量分析,以了解它们对相位噪声的影响。比较分析表明,存在五个不同的频率区域,其中四个拓扑在最佳相位噪声性能方面的排名不均匀。此外,从ISF获得的结果表明,闪烁噪声的影响是导致纳米级CMOS LC振荡器相位噪声劣化的主要影响。

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