机译:GaAs HBT技术中的Ku波段低相位噪声交叉耦合VCO
Henan Univ Sci & Technol, Elect Engn Coll, Luoyang 471023, Peoples R China;
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China;
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China;
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China;
Henan Univ Sci & Technol, Elect Engn Coll, Luoyang 471023, Peoples R China;
Henan Univ Sci & Technol, Elect Engn Coll, Luoyang 471023, Peoples R China;
Henan Univ Sci & Technol, Elect Engn Coll, Luoyang 471023, Peoples R China;
Henan Univ Sci & Technol, Elect Engn Coll, Luoyang 471023, Peoples R China;
Voltage controlled oscillator; GaAs HBT; Ku band; low phase noise; high output power;
机译:使用AlGaAs / GaAs HBT技术的15 GHz单片低相位噪声VCO
机译:利用GaInP / GaAs HBT技术的基于低噪声变压器的TOP系列QVCO
机译:InGaP / GaAs HBT技术中的Ku波段宽调谐范围高输出功率VCO
机译:基于4-GHz低相噪声变压器的顶部系列GAINP / GAAS HBT QVCO
机译:硅锗HBT和VCO中热载流子引起的降解和伽马射线引起的降解。
机译:高电子迁移晶体管技术中的GaAs Nanomembranes
机译:采用正交倍频和分频实现alGaas / Gaas HBT的超宽带数字VCO