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A Ku-Band Low-Phase-Noise Cross-Coupled VCO in GaAs HBT Technology

机译:GaAs HBT技术中的Ku波段低相位噪声交叉耦合VCO

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摘要

In this paper, a fully integrated Ku-band voltage controlled oscillator (VCO) with low phase noise is presented in a GaAs heterojunction bipolar transistor (HBT) technology. A cross-coupled configuration is employed to achieve low phase noise, and to achieve high output power, the largest HBT and higher bias current are adopted. The implemented VCO demonstrates that the oscillation frequency is from 13.77 GHz to 14.8 GHz, with a maximum 4.83 dBm output power at 13.77 GHz. The phase noise of the VCO is -100.2 dBc/Hz at 1MHz offset from 14.36 GHz oscillation frequency. The VCO consumes 61.2 mW from 6V supply and occupies an area of 0.51 mm x 0.62 mm. Finally, the figure-of-merits (FOMs) for VCOs are discussed.
机译:在本文中,采用GaAs异质结双极晶体管(HBT)技术提出了具有低相位噪声的完全集成Ku波段压控振荡器(VCO)。采用交叉耦合配置以实现低相位噪声,并实现高输出功率,采用最大的HBT和较高的偏置电流。实施的VCO证明,振荡频率为13.77 GHz至14.8 GHz,在13.77 GHz时最大输出功率为4.83 dBm。从14.36 GHz振荡频率偏移1MHz时,VCO的相位噪声为-100.2 dBc / Hz。 VCO通过6V电源消耗61.2 mW的功率,占地0.51 mm x 0.62 mm。最后,讨论了VCO的品质因数(FOM)。

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  • 来源
    《Journal of circuits, systems and computers》 |2016年第6期|1650053.1-1650053.10|共10页
  • 作者单位

    Henan Univ Sci & Technol, Elect Engn Coll, Luoyang 471023, Peoples R China;

    Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China;

    Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China;

    Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China;

    Henan Univ Sci & Technol, Elect Engn Coll, Luoyang 471023, Peoples R China;

    Henan Univ Sci & Technol, Elect Engn Coll, Luoyang 471023, Peoples R China;

    Henan Univ Sci & Technol, Elect Engn Coll, Luoyang 471023, Peoples R China;

    Henan Univ Sci & Technol, Elect Engn Coll, Luoyang 471023, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Voltage controlled oscillator; GaAs HBT; Ku band; low phase noise; high output power;

    机译:压控振荡器;GaAs HBT;Ku波段;低相位噪声;高输出功率;

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