A New Low Voltage Analog Circuit Model for Hodgkin-Huxley Neuron Employing FGMOS Transistors

摘要

A low voltage analog VLSI circuit model for Hodgkin-Huxley (HH) neuron cell equations (HH neuron model) is presented. Floating gate MOSFET (FGMOS) transistors in weak inversion region have been used to model HH equations such as gating variables, alpha and beta functions and combined action of m, n and h. The combination of m, n and h controls the Na+ and K+ channel currents. The superiorities of the proposed circuits are low supply voltage, low power consumption, less circuit complexity and as a result, low costs are compared to the previous works. The proposed circuit which uses 24 transistors is simulated in Hspice software using 0.18 mu technology and consumes 119 mu W.