Full-Wave Bridge Rectifier with CMOS Pass Transistors Configuration

摘要

An effortless, more efficient full-wave bridge rectifier is introduced with minimum distortion. Efficient and exploratory combinations of CMOS logic are not only utilized to design full-wave bridge rectifier, but also as pass transistors configurations at the input. The particular CMOS logic (used to design core rectifier circuit) is a collective form of SDG-NMOS and SGS-PMOS. SDG-NMOS refers to a shorted drain gate n-channel metal oxide semiconductor. SGS-PMOS refers to shorted gate to source p-channel metal oxide semiconductor. Due to the utilization of renovated MOS configuration after the replacement of the diode, the efficiency of the full-wave bridge rectifier is increased up to 11% compared to p-n junction diode based full wave bridge rectifier. The proposed full wave bridge rectifier is a comparably low power circuit. The proposed CMOS based full-wave bridge rectifier is optimized at 45-nm CMOS technology. Cadence experimental simulation and implementations of the leakage power and efficiency demonstrate better consistency through the proposed circuit.