Simulation of the Process of Creation of Thin Silicide Films on Silicon under High-temperature Annealing

摘要

The diffusion model for the process of creation of thin silicide films on silicon is developed. We obtain the formulas for determining the speed of motion of the interphase boundary of silicide-silicon and time for completion of formation of a silicide layer depending on the width of an evaporated metal film, the temperature of annealing, the diffusion coefficient and the maximum solubility of diffusant in the silicid.