Generation‐Recombination Noise in a Two‐Level Impurity Semiconductor

摘要

A general expression for the generation‐recombination noise in a two‐level impurity semiconductor is derived. Application is then made to zinc‐doped germanium in the dark from 20°K to 100°K. The total white noise in this case exhibits a maximum and a minimum as the temperature is increased and the contributions to the noise which can be associated with the individual levels vary.