Degradation in Zinc‐Doped GaAs Tunnel Diodes

Epstein A. S.; Caldwell J. F.

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Degradation in Zinc‐Doped GaAs Tunnel Diodes

机译：掺锌GaAs隧道二极管的性能下降

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摘要

The effects of the voltage swing, peak current‐to‐capacity ratio (IP/Cjv), zinc concentration, and lithium on the degradation of the peak tunnel current are examined in zinc‐doped GaAs tunnel diodes.

机译：在掺锌的GaAs隧道二极管中研究了电压摆幅，峰值电流容量比（IP / Cjv），锌浓度和锂对峰值隧道电流的影响。

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《Journal of Applied Physics 》 |1964年第8期| 共3页
作者
Epstein A. S.; Caldwell J. F.;
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Central Research Department, Monsanto Company, St. Louis, Missouri;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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1. Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors [J] . Delong Cui, eth M Hubbard, Dimitris Pavlidis Semiconductor science and technology . 2002 ,第6期

机译：掺杂和MOCVD条件对锌和碳掺杂InGaAs少数载流子寿命的影响及其在锌和碳掺杂InP / InGaAs异质结构双极晶体管中的应用
2. Partial Recovery of GaAs Tunnel Diodes after Stress‐Induced Degradation [J] . Marconato Roberto, Anderson R. L. Journal of Applied Physics . 1971 ,第8期

机译：应力诱导降解后GaAs隧道二极管的部分恢复
3. Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE [J] . Kang Seokjin, Ju Gun Wu, Min Jung-Wook, Japanese journal of applied physics . 2018 ,第12期

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4. Effect of Si-delta doping and barrier lengths on the performance of triple barrier GaAs/AlGaAs resonant tunneling diode [C] . Man Mohan Singh, M. J. Siddiqui IEEE International Conference on Electron Devices and Solid-State Circuits . 2016

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5. Toward a new diode laser: zinc oxide photoluminescence and p-type doping, theory of giant oscillator strength. [D] . Xiong, Gang. 2004

机译：面向新型二极管激光器：氧化锌光致发光和p型掺杂，具有巨大的振荡器强度理论。
6. GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications [O] . Jie Li, Hao Guo, Jun Liu, 2013

机译：Si上基于GaAs的谐振隧穿二极管（RTD）外延用于高度敏感的应变仪应用
7. Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors [O] . Delong Cui, Seth M Hubbard, Dimitris Pavlidis, 2002

机译：掺杂和MOCVD条件对锌 - 掺杂InGaAs少数型载体寿命的影响及其在锌和碳掺杂Inp / Ingaas异质结构双极晶体管的应用

Degradation in Zinc‐Doped GaAs Tunnel Diodes

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