Infrared Reflectivity of Heavily Doped Low‐Mobility Semiconductors. I. GaAs

摘要

The disagreement between experimental measurement of the reflectivity minimum of low‐mobility semiconductors and simple theory is accounted for by inclusion of the imaginary part of the dielectric constant in deriving the carrier‐concentration/plasma‐wavelength relationship. Data on the plasma wavelength of p‐type gallium arsenide are presented.