Hall‐Effect Levels Produced in Te‐Doped GaAs Crystals by Cu Diffusion

摘要

Hall‐effect measurements have been made on Te‐doped GaAs crystals diffused with known amounts of 64Cu sufficient to convert the crystals to p‐type. Energy levels are found above the valence band at 0.123±0.005 eV, 0.145±0.005 eV, 0.166±0.005 eV, 0.19±0.005 eV, and 0.43±0.01 eV. An analysis of the Hall data has been made by means of computer programs. The results may be summarized as follows: (1) Ga vacancies produced during the Cu diffusion associate with and neutralize Te as a compensating center. (2) The ionization energy of the TeCuGa pair is 0.19 eV rather than 0.166 eV as suggested previously.