Mass‐Spectrometric Study of Sputtering of Single Crystals of GaAs by Low‐Energy A Ions

摘要

Single crystals of GaAs [(110), (111), and (1¯1¯1¯) faces] were sputtered by normally incident low‐energy (0–140 eV) argon ions in the source of a mass spectrometer. For each face, approximately 99.4% of the collected ions were neutral Ga and As atomic species; the balance were neutral GaAs molecules. No neutral Ga2, As2 or (GaAs)2 molecules, or negative Ga-, As-, or (GaAs)- ions, with the characteristics of sputtered particles, were detected. Sputtering ``yields'''' for the three faces were found to be: ``Y'''' (111) ≈ ``Y'''' (1¯1¯1¯) ≫ ``Y'''' (110).