Diffusion of Minority Carriers in the Base Region of an Alloy Junction Transistor in the Presence of a Magnetic Field

摘要

This paper reports the study of the nature of diffusion of minority carriers in the base region of an alloy junction transistor in the presence of a magnetic field. It has been experimentally observed that the diffusion constant of minority‐carrier holes in a p‐n‐p type transistor is decreased in magnetic field and the magnitude of the decrement varies with the injected carrier density, being larger at higher injection levels. The relative change in diffusion constant shows a linear variation with the magnetic field intensity, contrary to the quadratic theory for isotropic semiconductor. The results have been explained by taking into consideration the effect of inhomogeneities due to concentration gradients and Hall perturbation effect given by Landauer and Swanson on the diffusion of carriers in the presence of magnetic field.