Hall Measurements of Te‐Doped Gallium Phosphide of Improved Homogeneity

摘要

Recent Hall measurements of GaP crystals doped with Te give more consistent values of donor binding energy and effective mass than our earlier work attributable we think to improved homogeneity in the crystals. The Hall coefficient, over the temperature range 80°–350°K, gives an excellent fit to the customary simple theoretical model. Hall mobilities in various samples ranged from 40–105 cm2/V·sec at room temperature and from 19–435 at 80°K. As a donor, Te has a binding energy of 80±5 meV at a concentration ND∼3×1017 cm-3, falling rapidly as ND increases. Extrapolation to low ND gives close agreement with the binding energy 93 meV reported from luminescent spectra. Estimates of the effective electron mass are discussed.